IXTF1N400

Product Parameter

Series

-

FET Type

N-Channel

Packaging

Tube

Vgs (Max)

±20V

Technology

MOSFET (Metal Oxide)

FET Feature

-

Part Status

Obsolete

Mounting Type

Through Hole

Package / Case

i4-Pac™-5 (3 Leads)

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

60Ohm @ 500mA, 10V

Power Dissipation (Max)

160W (Tc)

Supplier Device Package

ISOPLUS i4-PAC™

Gate Charge (Qg) (Max) @ Vgs

78nC @ 10V

Drain to Source Voltage (Vdss)

4000V

Input Capacitance (Ciss) (Max) @ Vds

2530pF @ 25V

Current - Continuous Drain (Id) @ 25°C

1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V