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HTNFET-D
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HTNFET-D

Manufacturer: Honeywell Aerospace In Stock 0 pcs

Datasheet: HTNFET-D
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 55V 8-DIP $391.5
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Product Parameter

Series
HTMOS™
FET Type
N-Channel
Packaging
Bulk
Vgs (Max)
10V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Through Hole
Package / Case
8-CDIP Exposed Pad
Vgs(th) (Max) @ Id
2.4V @ 100µA
Operating Temperature
-55°C ~ 225°C (TJ)
Rds On (Max) @ Id, Vgs
400mOhm @ 100mA, 5V
Power Dissipation (Max)
50W (Tj)
Supplier Device Package
8-CDIP-EP
Gate Charge (Qg) (Max) @ Vgs
4.3nC @ 5V
Drain to Source Voltage (Vdss)
55V
Input Capacitance (Ciss) (Max) @ Vds
290pF @ 28V
Current - Continuous Drain (Id) @ 25°C
-
Drive Voltage (Max Rds On, Min Rds On)
5V