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GA10SICP12-263
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GA10SICP12-263

Manufacturer: GeneSiC Semiconductor In Stock 0 pcs

Datasheet: GA10SICP12-263
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: TRANS SJT 1200V 25A TO263-7 $27.92
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Product Parameter

Series
-
FET Type
-
Packaging
Tube
Vgs (Max)
-
Technology
SiC (Silicon Carbide Junction Transistor)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Vgs(th) (Max) @ Id
-
Operating Temperature
175°C (TJ)
Rds On (Max) @ Id, Vgs
100mOhm @ 10A
Power Dissipation (Max)
170W (Tc)
Supplier Device Package
D2PAK (7-Lead)
Drain to Source Voltage (Vdss)
1200V
Input Capacitance (Ciss) (Max) @ Vds
1403pF @ 800V
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-