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GA100JT12-227
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GA100JT12-227

Manufacturer: GeneSiC Semiconductor In Stock 0 pcs

Datasheet: GA100JT12-227
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: TRANS SJT 1200V 160A SOT227 Inquiry
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Product Parameter

Series
-
FET Type
-
Packaging
Tube
Vgs (Max)
-
Technology
SiC (Silicon Carbide Junction Transistor)
FET Feature
-
Part Status
Obsolete
Mounting Type
Chassis Mount
Package / Case
SOT-227-4, miniBLOC
Vgs(th) (Max) @ Id
-
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
10mOhm @ 100A
Power Dissipation (Max)
535W (Tc)
Supplier Device Package
SOT-227
Drain to Source Voltage (Vdss)
1200V
Input Capacitance (Ciss) (Max) @ Vds
14400pF @ 800V
Current - Continuous Drain (Id) @ 25°C
160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-