2N7635-GA

Product Parameter

Series

-

FET Type

-

Packaging

Bulk

Vgs (Max)

-

Technology

SiC (Silicon Carbide Junction Transistor)

FET Feature

-

Part Status

Obsolete

Mounting Type

Through Hole

Package / Case

TO-257-3

Vgs(th) (Max) @ Id

-

Operating Temperature

-55°C ~ 225°C (TJ)

Rds On (Max) @ Id, Vgs

415mOhm @ 4A

Power Dissipation (Max)

47W (Tc)

Supplier Device Package

TO-257

Drain to Source Voltage (Vdss)

650V

Input Capacitance (Ciss) (Max) @ Vds

324pF @ 35V

Current - Continuous Drain (Id) @ 25°C

4A (Tc) (165°C)

Drive Voltage (Max Rds On, Min Rds On)

-