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SQS415ENW-T1_GE3
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SQS415ENW-T1_GE3

Manufacturer: Vishay / Siliconix In Stock 420 pcs

Datasheet: SQS415ENW-T1_GE3
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET P-CH 40V PPAK 1212-8W $0.87
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Product Parameter

Series
Automotive, AEC-Q101, TrenchFET®
FET Type
P-Channel
Packaging
Cut Tape (CT)
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8W
Vgs(th) (Max) @ Id
2.5V @ 250µA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
16.1mOhm @ 12A, 10V
Power Dissipation (Max)
62.5W (Tc)
Supplier Device Package
PowerPAK® 1212-8W
Gate Charge (Qg) (Max) @ Vgs
82nC @ 10V
Drain to Source Voltage (Vdss)
40V
Input Capacitance (Ciss) (Max) @ Vds
4825pF @ 25V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V