SQD10950E_GE3
| Manufacturer: | Vishay / Siliconix |
In Stock 0 pcs
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| Datasheet: | SQD10950E_GE3 | ||
| Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
| Description: | AUTOMOTIVE N-CHANNEL 250 V (D-S) | $1.14 | |
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Product Parameter
- Series
- Automotive, AEC-Q101, TrenchFET®
- FET Type
- N-Channel
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 3.5V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 162mOhm @ 12A, 10V
- Power Dissipation (Max)
- 62W (Tc)
- Supplier Device Package
- TO-252AA
- Gate Charge (Qg) (Max) @ Vgs
- 16nC @ 10V
- Drain to Source Voltage (Vdss)
- 250V
- Input Capacitance (Ciss) (Max) @ Vds
- 785pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 11.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 7.5V, 10V
Lanka Micro