SIRA14BDP-T1-GE3
Manufacturer: | Vishay / Siliconix |
In Stock 5884 pcs
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Datasheet: | SIRA14BDP-T1-GE3 | ||
Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
Description: | MOSFET N-CHAN 30-V POWERPAK SO-8 | Inquiry |
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Product Parameter
- Series
- TrenchFET® Gen IV
- FET Type
- N-Channel
- Packaging
- Digi-Reel®
- Vgs (Max)
- +20V, -16V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® SO-8
- Vgs(th) (Max) @ Id
- 2.2V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 5.38mOhm @ 10A, 10V
- Power Dissipation (Max)
- 3.7W (Ta), 36W (Tc)
- Supplier Device Package
- PowerPAK® SO-8
- Gate Charge (Qg) (Max) @ Vgs
- 22nC @ 10V
- Drain to Source Voltage (Vdss)
- 30V
- Input Capacitance (Ciss) (Max) @ Vds
- 917pF @ 15V
- Current - Continuous Drain (Id) @ 25°C
- 21A (Ta), 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V