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SIHP6N65E-GE3
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SIHP6N65E-GE3

Manufacturer: Vishay / Siliconix In Stock 0 pcs

Datasheet: SIHP6N65E-GE3
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 650V 7A TO220AB $1.01
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Product Parameter

Series
-
FET Type
N-Channel
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Through Hole
Package / Case
TO-220-3
Vgs(th) (Max) @ Id
4V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
600mOhm @ 3A, 10V
Power Dissipation (Max)
78W (Tc)
Supplier Device Package
TO-220AB
Gate Charge (Qg) (Max) @ Vgs
48nC @ 10V
Drain to Source Voltage (Vdss)
650V
Input Capacitance (Ciss) (Max) @ Vds
820pF @ 100V
Current - Continuous Drain (Id) @ 25°C
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V