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SIHF12N65E-GE3
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SIHF12N65E-GE3

Manufacturer: Vishay / Siliconix In Stock 831 pcs

Datasheet: SIHF12N65E-GE3
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 650V 12A TO-220 $2.43
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Product Parameter

Series
-
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Vgs(th) (Max) @ Id
4V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
380mOhm @ 6A, 10V
Power Dissipation (Max)
33W (Tc)
Supplier Device Package
TO-220 Full Pack
Gate Charge (Qg) (Max) @ Vgs
70nC @ 10V
Drain to Source Voltage (Vdss)
650V
Input Capacitance (Ciss) (Max) @ Vds
1224pF @ 100V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V