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SIHB180N60E-GE3
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SIHB180N60E-GE3

Manufacturer: Vishay / Siliconix In Stock 20 pcs

Datasheet: SIHB180N60E-GE3
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH D2PAK TO-263 $3.22
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Product Parameter

Series
E
FET Type
N-Channel
Packaging
Bulk
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id
5V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
180mOhm @ 9.5A, 10V
Power Dissipation (Max)
156W (Tc)
Supplier Device Package
D²PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs
33nC @ 10V
Drain to Source Voltage (Vdss)
600V
Input Capacitance (Ciss) (Max) @ Vds
1085pF @ 100V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V