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SIE836DF-T1-E3
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SIE836DF-T1-E3

Manufacturer: Vishay / Siliconix In Stock 0 pcs

Datasheet: SIE836DF-T1-E3
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 200V 18.3A POLARPAK Inquiry
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Product Parameter

Series
TrenchFET®
FET Type
N-Channel
Packaging
Tape & Reel (TR)
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
10-PolarPAK® (SH)
Vgs(th) (Max) @ Id
4.5V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
130mOhm @ 4.1A, 10V
Power Dissipation (Max)
5.2W (Ta), 104W (Tc)
Supplier Device Package
10-PolarPAK® (SH)
Gate Charge (Qg) (Max) @ Vgs
41nC @ 10V
Drain to Source Voltage (Vdss)
200V
Input Capacitance (Ciss) (Max) @ Vds
1200pF @ 100V
Current - Continuous Drain (Id) @ 25°C
18.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V