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SI8851EDB-T2-E1
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SI8851EDB-T2-E1

Manufacturer: Vishay / Siliconix In Stock 2467 pcs

Datasheet: SI8851EDB-T2-E1
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET P-CH 20V 7.7A MICRO FOOT Inquiry
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Product Parameter

Series
TrenchFET®
FET Type
P-Channel
Packaging
Digi-Reel®
Vgs (Max)
±8V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
30-XFBGA
Base Part Number
SI8851
Vgs(th) (Max) @ Id
1V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
8mOhm @ 7A, 4.5V
Power Dissipation (Max)
660mW (Ta)
Supplier Device Package
Power Micro Foot® (2.4x2)
Gate Charge (Qg) (Max) @ Vgs
180nC @ 8V
Drain to Source Voltage (Vdss)
20V
Input Capacitance (Ciss) (Max) @ Vds
6900pF @ 10V
Current - Continuous Drain (Id) @ 25°C
7.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V