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SI8465DB-T2-E1
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SI8465DB-T2-E1

Manufacturer: Vishay / Siliconix In Stock 575 pcs

Datasheet: SI8465DB-T2-E1
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET P-CH 20V MICROFOOT $0.45
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Product Parameter

Series
TrenchFET®
FET Type
P-Channel
Packaging
Cut Tape (CT)
Vgs (Max)
±12V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Discontinued at Digi-Key
Mounting Type
Surface Mount
Package / Case
4-XFBGA, CSPBGA
Vgs(th) (Max) @ Id
1.5V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
104mOhm @ 1.5A, 4.5V
Power Dissipation (Max)
780mW (Ta), 1.8W (Tc)
Supplier Device Package
4-Microfoot
Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V
Drain to Source Voltage (Vdss)
20V
Input Capacitance (Ciss) (Max) @ Vds
450pF @ 10V
Current - Continuous Drain (Id) @ 25°C
-
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V