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SI5511DC-T1-E3
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SI5511DC-T1-E3

Manufacturer: Vishay / Siliconix In Stock 0 pcs

Datasheet: SI5511DC-T1-E3
Product Category: Transistors - FETs, MOSFETs - Arrays Reference Price (In US Dollars) 1pcs
Description: MOSFET N/P-CH 30V 4A 1206-8 Inquiry
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Product Parameter

Series
TrenchFET®
FET Type
N and P-Channel
Packaging
Digi-Reel®
FET Feature
Logic Level Gate
Part Status
Obsolete
Power - Max
3.1W, 2.6W
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Base Part Number
SI5511
Vgs(th) (Max) @ Id
2V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
55mOhm @ 4.8A, 4.5V
Supplier Device Package
1206-8 ChipFET™
Gate Charge (Qg) (Max) @ Vgs
7.1nC @ 5V
Drain to Source Voltage (Vdss)
30V
Input Capacitance (Ciss) (Max) @ Vds
435pF @ 15V
Current - Continuous Drain (Id) @ 25°C
4A, 3.6A