SI5509DC-T1-GE3
| Manufacturer: | Vishay / Siliconix |
In Stock 0 pcs
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| Datasheet: | SI5509DC-T1-GE3 | ||
| Product Category: | Transistors - FETs, MOSFETs - Arrays | Reference Price (In US Dollars) | 1pcs |
| Description: | MOSFET N/P-CH 20V 6.1A 1206-8 | Inquiry | |
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Product Parameter
- Series
- TrenchFET®
- FET Type
- N and P-Channel
- Packaging
- Tape & Reel (TR)
- FET Feature
- Logic Level Gate
- Part Status
- Obsolete
- Power - Max
- 4.5W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SMD, Flat Lead
- Base Part Number
- SI5509
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 52mOhm @ 5A, 4.5V
- Supplier Device Package
- 1206-8 ChipFET™
- Gate Charge (Qg) (Max) @ Vgs
- 6.6nC @ 5V
- Drain to Source Voltage (Vdss)
- 20V
- Input Capacitance (Ciss) (Max) @ Vds
- 455pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 6.1A, 4.8A
Lanka Micro