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SI4778DY-T1-GE3
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SI4778DY-T1-GE3

Manufacturer: Vishay / Siliconix In Stock 3 pcs

Datasheet: SI4778DY-T1-GE3
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 25V 8A 8-SOIC Inquiry
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Product Parameter

Series
TrenchFET®
FET Type
N-Channel
Packaging
Digi-Reel®
Vgs (Max)
±16V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id
2.2V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
23mOhm @ 7A, 10V
Power Dissipation (Max)
2.4W (Ta), 5W (Tc)
Supplier Device Package
8-SO
Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V
Drain to Source Voltage (Vdss)
25V
Input Capacitance (Ciss) (Max) @ Vds
680pF @ 13V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V