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SI4463CDY-T1-GE3
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SI4463CDY-T1-GE3

Manufacturer: Vishay / Siliconix In Stock 1755 pcs

Datasheet: SI4463CDY-T1-GE3
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET P-CHAN 2.5V SO8 Inquiry
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Product Parameter

Series
TrenchFET®
FET Type
P-Channel
Packaging
Digi-Reel®
Vgs (Max)
±12V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id
1.4V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
8mOhm @ 13A, 10V
Power Dissipation (Max)
2.7W (Ta), 5W (Tc)
Supplier Device Package
8-SO
Gate Charge (Qg) (Max) @ Vgs
162nC @ 10V
Drain to Source Voltage (Vdss)
20V
Input Capacitance (Ciss) (Max) @ Vds
4250pF @ 15V
Current - Continuous Drain (Id) @ 25°C
13.6A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V