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SI3458BDV-T1-GE3
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SI3458BDV-T1-GE3

Manufacturer: Vishay / Siliconix In Stock 13184 pcs

Datasheet: SI3458BDV-T1-GE3
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 60V 4.1A 6-TSOP Inquiry
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Product Parameter

Series
TrenchFET®
FET Type
N-Channel
Packaging
Digi-Reel®
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ Id
3V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
100mOhm @ 3.2A, 10V
Power Dissipation (Max)
2W (Ta), 3.3W (Tc)
Supplier Device Package
6-TSOP
Gate Charge (Qg) (Max) @ Vgs
11nC @ 10V
Drain to Source Voltage (Vdss)
60V
Input Capacitance (Ciss) (Max) @ Vds
350pF @ 30V
Current - Continuous Drain (Id) @ 25°C
4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V