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SI3429EDV-T1-GE3
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SI3429EDV-T1-GE3

Manufacturer: Vishay / Siliconix In Stock 30 pcs

Datasheet: SI3429EDV-T1-GE3
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET P-CHAN 20V TSOP6S $0.46
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Product Parameter

Series
TrenchFET®
FET Type
P-Channel
Packaging
Cut Tape (CT)
Vgs (Max)
±8V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ Id
1V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
21mOhm @ 4A, 4.5V
Power Dissipation (Max)
4.2W (Tc)
Supplier Device Package
6-TSOP
Gate Charge (Qg) (Max) @ Vgs
118nC @ 10V
Drain to Source Voltage (Vdss)
20V
Input Capacitance (Ciss) (Max) @ Vds
4085pF @ 50V
Current - Continuous Drain (Id) @ 25°C
8A (Ta), 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V