Menu Navigation

SI2365EDS-T1-GE3
Images are for reference only. See Product Specifications for product details
thumb-0

SI2365EDS-T1-GE3

Manufacturer: Vishay / Siliconix In Stock 33000 pcs

Datasheet: SI2365EDS-T1-GE3
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET P-CH 20V 5.9A TO-236 $0.09
Fill out the below form and we will contact you as soon as possible.

Product Parameter

Series
TrenchFET®
FET Type
P-Channel
Packaging
Tape & Reel (TR)
Vgs (Max)
±8V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ Id
1V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
32mOhm @ 4A, 4.5V
Power Dissipation (Max)
1W (Ta), 1.7W (Tc)
Supplier Device Package
TO-236
Gate Charge (Qg) (Max) @ Vgs
36nC @ 8V
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V