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SI2329DS-T1-GE3
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SI2329DS-T1-GE3

Manufacturer: Vishay / Siliconix In Stock 6000 pcs

Datasheet: SI2329DS-T1-GE3
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET P-CH 8V 6A SOT-23 $0.22
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Product Parameter

Series
TrenchFET®
FET Type
P-Channel
Packaging
Tape & Reel (TR)
Vgs (Max)
±5V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ Id
800mV @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
30mOhm @ 5.3A, 4.5V
Power Dissipation (Max)
2.5W (Tc)
Supplier Device Package
SOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs
29nC @ 4.5V
Drain to Source Voltage (Vdss)
8V
Input Capacitance (Ciss) (Max) @ Vds
1485pF @ 4V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V