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SI2312BDS-T1-E3
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SI2312BDS-T1-E3

Manufacturer: Vishay / Siliconix In Stock 115901 pcs

Datasheet: SI2312BDS-T1-E3
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 20V 3.9A SOT23-3 Inquiry
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Product Parameter

Series
TrenchFET®
FET Type
N-Channel
Packaging
Digi-Reel®
Vgs (Max)
±8V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ Id
850mV @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
31mOhm @ 5A, 4.5V
Power Dissipation (Max)
750mW (Ta)
Supplier Device Package
SOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs
12nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V