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SI2301CDS-T1-GE3
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SI2301CDS-T1-GE3

Manufacturer: Vishay / Siliconix In Stock 103816 pcs

Datasheet: SI2301CDS-T1-GE3
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET P-CH 20V 3.1A SOT23-3 Inquiry
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Product Parameter

Series
TrenchFET®
FET Type
P-Channel
Packaging
Digi-Reel®
Vgs (Max)
±8V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ Id
1V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
112mOhm @ 2.8A, 4.5V
Power Dissipation (Max)
860mW (Ta), 1.6W (Tc)
Supplier Device Package
SOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs
10nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Input Capacitance (Ciss) (Max) @ Vds
405pF @ 10V
Current - Continuous Drain (Id) @ 25°C
3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V