Menu Navigation

ULN2803APG,CN
Images are for reference only. See Product Specifications for product details
thumb-0

ULN2803APG,CN

Manufacturer: Toshiba Semiconductor and Storage In Stock 0 pcs

Datasheet: ULN2803APG,CN
Product Category: Transistors - Bipolar (BJT) - Arrays Reference Price (In US Dollars) 1pcs
Description: TRANS 8NPN DARL 50V 0.5A 18DIP Inquiry
Fill out the below form and we will contact you as soon as possible.

Product Parameter

Series
-
Packaging
Tube
Part Status
Obsolete
Power - Max
1.47W
Mounting Type
Through Hole
Package / Case
18-DIP (0.300", 7.62mm)
Transistor Type
8 NPN Darlington
Base Part Number
ULN280*A
Operating Temperature
-40°C ~ 85°C (TA)
Frequency - Transition
-
Supplier Device Package
18-DIP
Vce Saturation (Max) @ Ib, Ic
1.6V @ 500µA, 350mA
Current - Collector (Ic) (Max)
500mA
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 350mA, 2V
Voltage - Collector Emitter Breakdown (Max)
50V