TK11P65W,RQ
| Manufacturer: | Toshiba Semiconductor and Storage |
In Stock 0 pcs
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| Datasheet: | TK11P65W,RQ | ||
| Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
| Description: | MOSFET N-CH 650V 11.1A DPAK-0S | $0.79 | |
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Product Parameter
- Series
- DTMOSIV
- FET Type
- N-Channel
- Packaging
- Tape & Reel (TR)
- Vgs (Max)
- ±30V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 3.5V @ 450µA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 440mOhm @ 5.5A, 10V
- Power Dissipation (Max)
- 100W (Tc)
- Supplier Device Package
- DPAK
- Gate Charge (Qg) (Max) @ Vgs
- 25nC @ 10V
- Drain to Source Voltage (Vdss)
- 650V
- Input Capacitance (Ciss) (Max) @ Vds
- 890pF @ 300V
- Current - Continuous Drain (Id) @ 25°C
- 11.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
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