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TK100L60W,VQ
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TK100L60W,VQ

Manufacturer: Toshiba Semiconductor and Storage In Stock 65 pcs

Datasheet: TK100L60W,VQ
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N CH 600V 100A TO3P(L) $30.11
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Product Parameter

Series
DTMOSIV
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
FET Feature
Super Junction
Part Status
Active
Mounting Type
Through Hole
Package / Case
TO-3PL
Vgs(th) (Max) @ Id
3.7V @ 5mA
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
18mOhm @ 50A, 10V
Power Dissipation (Max)
797W (Tc)
Supplier Device Package
TO-3P(L)
Gate Charge (Qg) (Max) @ Vgs
360nC @ 10V
Drain to Source Voltage (Vdss)
600V
Input Capacitance (Ciss) (Max) @ Vds
15000pF @ 30V
Current - Continuous Drain (Id) @ 25°C
100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V