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RN2905FE,LF(CT
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RN2905FE,LF(CT

Manufacturer: Toshiba Semiconductor and Storage In Stock 0 pcs

Datasheet: RN2905FE,LF(CT
Product Category: Transistors - Bipolar (BJT) - Arrays, Pre-Biased Reference Price (In US Dollars) 1pcs
Description: TRANS 2PNP PREBIAS 0.1W ES6 $0.05
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Product Parameter

Series
-
Packaging
Tape & Reel (TR)
Part Status
Active
Power - Max
100mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Transistor Type
2 PNP - Pre-Biased (Dual)
Resistor - Base (R1)
2.2kOhms
Frequency - Transition
200MHz
Supplier Device Package
ES6
Resistor - Emitter Base (R2)
47kOhms
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector (Ic) (Max)
100mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max)
50V