Menu Navigation

RN1444ATE85LF
Images are for reference only. See Product Specifications for product details
thumb-0

RN1444ATE85LF

Manufacturer: Toshiba Semiconductor and Storage In Stock 0 pcs

Datasheet: RN1444ATE85LF
Product Category: Transistors - Bipolar (BJT) - Single, Pre-Biased Reference Price (In US Dollars) 1pcs
Description: TRANS PREBIAS NPN 0.2W S-MINI Inquiry
Fill out the below form and we will contact you as soon as possible.

Product Parameter

Series
-
Packaging
Digi-ReelĀ®
Part Status
Obsolete
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN - Pre-Biased
Resistor - Base (R1)
2.2 kOhms
Frequency - Transition
30MHz
Supplier Device Package
S-Mini
Vce Saturation (Max) @ Ib, Ic
100mV @ 3mA, 30mA
Current - Collector (Ic) (Max)
300mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 4mA, 2V
Voltage - Collector Emitter Breakdown (Max)
20V