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RN1105MFV,L3F
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RN1105MFV,L3F

Manufacturer: Toshiba Semiconductor and Storage In Stock 0 pcs

Datasheet: RN1105MFV,L3F
Product Category: Transistors - Bipolar (BJT) - Single, Pre-Biased Reference Price (In US Dollars) 1pcs
Description: TRANS PREBIAS NPN 0.15W VESM Inquiry
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Product Parameter

Series
-
Packaging
Digi-Reel®
Part Status
Discontinued at Digi-Key
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SOT-723
Transistor Type
NPN - Pre-Biased
Resistor - Base (R1)
2.2 kOhms
Supplier Device Package
VESM
Resistor - Emitter Base (R2)
47 kOhms
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 5mA
Current - Collector (Ic) (Max)
100mA
Current - Collector Cutoff (Max)
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max)
50V