MT3S113P(TE12L,F)
| Manufacturer: | Toshiba Semiconductor and Storage |
In Stock 1821 pcs
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| Datasheet: | MT3S113P(TE12L,F) | ||
| Product Category: | Transistors - Bipolar (BJT) - RF | Reference Price (In US Dollars) | 1pcs |
| Description: | RF TRANS NPN 5.3V 7.7GHZ PW-MINI | Inquiry | |
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Product Parameter
- Gain
- 10.5dB
- Series
- -
- Packaging
- Digi-Reel®
- Part Status
- Active
- Power - Max
- 1.6W
- Mounting Type
- Surface Mount
- Package / Case
- TO-243AA
- Transistor Type
- NPN
- Operating Temperature
- 150°C (TJ)
- Frequency - Transition
- 7.7GHz
- Supplier Device Package
- PW-MINI
- Noise Figure (dB Typ @ f)
- 1.45dB @ 1GHz
- Current - Collector (Ic) (Max)
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 30mA, 5V
- Voltage - Collector Emitter Breakdown (Max)
- 5.3V
Lanka Micro