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MT3S113P(TE12L,F)
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MT3S113P(TE12L,F)

Manufacturer: Toshiba Semiconductor and Storage In Stock 1821 pcs

Datasheet: MT3S113P(TE12L,F)
Product Category: Transistors - Bipolar (BJT) - RF Reference Price (In US Dollars) 1pcs
Description: RF TRANS NPN 5.3V 7.7GHZ PW-MINI Inquiry
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Product Parameter

Gain
10.5dB
Series
-
Packaging
Digi-Reel®
Part Status
Active
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
TO-243AA
Transistor Type
NPN
Operating Temperature
150°C (TJ)
Frequency - Transition
7.7GHz
Supplier Device Package
PW-MINI
Noise Figure (dB Typ @ f)
1.45dB @ 1GHz
Current - Collector (Ic) (Max)
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max)
5.3V