MT3S113(TE85L,F)
| Manufacturer: | Toshiba Semiconductor and Storage |
In Stock 5919 pcs
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| Datasheet: | MT3S113(TE85L,F) | ||
| Product Category: | Transistors - Bipolar (BJT) - RF | Reference Price (In US Dollars) | 1pcs |
| Description: | RF TRANS NPN 5.3V 12.5GHZ SMINI | Inquiry | |
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Product Parameter
- Gain
- 11.8dB
- Series
- -
- Packaging
- Digi-Reel®
- Part Status
- Active
- Power - Max
- 800mW
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Transistor Type
- NPN
- Operating Temperature
- 150°C (TJ)
- Frequency - Transition
- 12.5GHz
- Supplier Device Package
- S-Mini
- Noise Figure (dB Typ @ f)
- 1.45dB @ 1GHz
- Current - Collector (Ic) (Max)
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 30mA, 5V
- Voltage - Collector Emitter Breakdown (Max)
- 5.3V
Lanka Micro