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MT3S113(TE85L,F)
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MT3S113(TE85L,F)

Manufacturer: Toshiba Semiconductor and Storage In Stock 5919 pcs

Datasheet: MT3S113(TE85L,F)
Product Category: Transistors - Bipolar (BJT) - RF Reference Price (In US Dollars) 1pcs
Description: RF TRANS NPN 5.3V 12.5GHZ SMINI Inquiry
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Product Parameter

Gain
11.8dB
Series
-
Packaging
Digi-Reel®
Part Status
Active
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN
Operating Temperature
150°C (TJ)
Frequency - Transition
12.5GHz
Supplier Device Package
S-Mini
Noise Figure (dB Typ @ f)
1.45dB @ 1GHz
Current - Collector (Ic) (Max)
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max)
5.3V