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HN3C51F-GR(TE85L,F
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HN3C51F-GR(TE85L,F

Manufacturer: Toshiba Semiconductor and Storage In Stock 0 pcs

Datasheet: HN3C51F-GR(TE85L,F
Product Category: Transistors - Bipolar (BJT) - Arrays Reference Price (In US Dollars) 1pcs
Description: TRANS 2NPN 120V 0.1A SM6 Inquiry
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Product Parameter

Series
-
Packaging
Digi-Reel®
Part Status
Obsolete
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-74, SOT-457
Transistor Type
2 NPN (Dual)
Operating Temperature
150°C (TJ)
Frequency - Transition
100MHz
Supplier Device Package
SM6
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
Current - Collector (Ic) (Max)
100mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA, 6V
Voltage - Collector Emitter Breakdown (Max)
120V