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HN1B04F(TE85L,F)
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HN1B04F(TE85L,F)

Manufacturer: Toshiba Semiconductor and Storage In Stock 0 pcs

Datasheet: HN1B04F(TE85L,F)
Product Category: Transistors - Bipolar (BJT) - Arrays Reference Price (In US Dollars) 1pcs
Description: TRANS NPN/PNP 30V 0.5A SM6 Inquiry
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Product Parameter

Series
-
Packaging
Digi-Reel®
Part Status
Obsolete
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-74, SOT-457
Transistor Type
NPN, PNP
Operating Temperature
150°C (TJ)
Frequency - Transition
200MHz
Supplier Device Package
SM6
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Current - Collector (Ic) (Max)
500mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 100mA, 1V
Voltage - Collector Emitter Breakdown (Max)
30V