2SJ162-E

Product Parameter

Series

-

FET Type

P-Channel

Packaging

Tube

Vgs (Max)

±15V

Technology

MOSFET (Metal Oxide)

FET Feature

-

Part Status

Obsolete

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Vgs(th) (Max) @ Id

-

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

-

Power Dissipation (Max)

100W (Tc)

Supplier Device Package

TO-3P

Drain to Source Voltage (Vdss)

160V

Input Capacitance (Ciss) (Max) @ Vds

900pF @ 10V

Current - Continuous Drain (Id) @ 25°C

7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V