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RQ3E100GNTB
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RQ3E100GNTB

Manufacturer: ROHM Semiconductor In Stock 2971 pcs

Datasheet: RQ3E100GNTB
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 30V 10A 8-HSMT Inquiry
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Product Parameter

Series
-
FET Type
N-Channel
Packaging
Digi-Reel®
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Vgs(th) (Max) @ Id
2.5V @ 1mA
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
11.7mOhm @ 10A, 10V
Power Dissipation (Max)
2W (Ta), 15W (Tc)
Supplier Device Package
8-HSMT (3.2x3)
Gate Charge (Qg) (Max) @ Vgs
7.9nC @ 10V
Drain to Source Voltage (Vdss)
30V
Input Capacitance (Ciss) (Max) @ Vds
420pF @ 15V
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V