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BSM180D12P3C007
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BSM180D12P3C007

Manufacturer: ROHM Semiconductor In Stock 26 pcs

Datasheet: BSM180D12P3C007
Product Category: Transistors - FETs, MOSFETs - Arrays Reference Price (In US Dollars) 1pcs
Description: SIC POWER MODULE $525.71
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Product Parameter

Series
-
FET Type
2 N-Channel (Dual)
Packaging
Bulk
FET Feature
Silicon Carbide (SiC)
Part Status
Active
Power - Max
880W
Mounting Type
Surface Mount
Package / Case
Module
Vgs(th) (Max) @ Id
5.6V @ 50mA
Operating Temperature
175°C (TJ)
Rds On (Max) @ Id, Vgs
-
Supplier Device Package
Module
Gate Charge (Qg) (Max) @ Vgs
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds
900pF @ 10V
Current - Continuous Drain (Id) @ 25°C
180A (Tc)