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NVMFSW6D1N08HT1G
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NVMFSW6D1N08HT1G

Manufacturer: ON Semiconductor In Stock 0 pcs

Datasheet: NVMFSW6D1N08HT1G
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: T8 80V 1 PART PROLIFERATI $0.71
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Product Parameter

Series
Automotive, AEC-Q101
FET Type
N-Channel
Packaging
-
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN, 5 Leads
Vgs(th) (Max) @ Id
4V @ 120µA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
5.5mOhm @ 20A, 10V
Power Dissipation (Max)
3.8W (Ta), 104W (Tc)
Supplier Device Package
5-DFN (5x6) (8-SOFL)
Gate Charge (Qg) (Max) @ Vgs
32nC @ 10V
Drain to Source Voltage (Vdss)
80V
Input Capacitance (Ciss) (Max) @ Vds
2085pF @ 40V
Current - Continuous Drain (Id) @ 25°C
17A (Ta), 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V