NVMFSW6D1N08HT1G
| Manufacturer: | ON Semiconductor |
In Stock 0 pcs
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| Datasheet: | NVMFSW6D1N08HT1G | ||
| Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
| Description: | T8 80V 1 PART PROLIFERATI | $0.71 | |
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Product Parameter
- Series
- Automotive, AEC-Q101
- FET Type
- N-Channel
- Packaging
- -
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN, 5 Leads
- Vgs(th) (Max) @ Id
- 4V @ 120µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 5.5mOhm @ 20A, 10V
- Power Dissipation (Max)
- 3.8W (Ta), 104W (Tc)
- Supplier Device Package
- 5-DFN (5x6) (8-SOFL)
- Gate Charge (Qg) (Max) @ Vgs
- 32nC @ 10V
- Drain to Source Voltage (Vdss)
- 80V
- Input Capacitance (Ciss) (Max) @ Vds
- 2085pF @ 40V
- Current - Continuous Drain (Id) @ 25°C
- 17A (Ta), 89A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
Lanka Micro