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FDD10N20LZTM
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FDD10N20LZTM

Manufacturer: ON Semiconductor In Stock 2505 pcs

Datasheet: FDD10N20LZTM
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 200V 7.6A DPAK-3 $0.86
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Product Parameter

Series
UniFET™
FET Type
N-Channel
Packaging
Cut Tape (CT)
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id
2.5V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
360mOhm @ 3.8A, 10V
Power Dissipation (Max)
83W (Tc)
Supplier Device Package
DPAK
Gate Charge (Qg) (Max) @ Vgs
16nC @ 10V
Drain to Source Voltage (Vdss)
200V
Input Capacitance (Ciss) (Max) @ Vds
585pF @ 25V
Current - Continuous Drain (Id) @ 25°C
7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V