SPB21N10

Product Parameter

Series

SIPMOS®

FET Type

N-Channel

Packaging

Cut Tape (CT)

Vgs (Max)

±20V

Technology

MOSFET (Metal Oxide)

FET Feature

-

Part Status

Obsolete

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

4V @ 44µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

80mOhm @ 15A, 10V

Power Dissipation (Max)

90W (Tc)

Supplier Device Package

PG-TO263-3-2

Gate Charge (Qg) (Max) @ Vgs

38.4nC @ 10V

Drain to Source Voltage (Vdss)

100V

Input Capacitance (Ciss) (Max) @ Vds

865pF @ 25V

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V