IRLR8103

Product Parameter

Series

HEXFET®

FET Type

N-Channel

Packaging

Tube

Vgs (Max)

±20V

Technology

MOSFET (Metal Oxide)

FET Feature

-

Part Status

Obsolete

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

2V @ 250µA (Min)

Rds On (Max) @ Id, Vgs

7mOhm @ 15A, 10V

Power Dissipation (Max)

89W (Ta)

Supplier Device Package

D-Pak

Gate Charge (Qg) (Max) @ Vgs

50nC @ 5V

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

89A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V