IRLIB9343

Product Parameter

Series

HEXFET®

FET Type

P-Channel

Packaging

Tube

Vgs (Max)

±20V

Technology

MOSFET (Metal Oxide)

FET Feature

-

Part Status

Obsolete

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Vgs(th) (Max) @ Id

1V @ 250µA

Operating Temperature

-40°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

105mOhm @ 3.4A, 10V

Power Dissipation (Max)

33W (Tc)

Supplier Device Package

TO-220AB Full-Pak

Gate Charge (Qg) (Max) @ Vgs

47nC @ 10V

Drain to Source Voltage (Vdss)

55V

Input Capacitance (Ciss) (Max) @ Vds

660pF @ 50V

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V