IRF7811

Product Parameter

Series

HEXFET®

FET Type

N-Channel

Packaging

Tube

Vgs (Max)

±12V

Technology

MOSFET (Metal Oxide)

FET Feature

-

Part Status

Obsolete

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Vgs(th) (Max) @ Id

1V @ 250µA

Rds On (Max) @ Id, Vgs

11mOhm @ 15A, 4.5V

Power Dissipation (Max)

3.5W (Ta)

Supplier Device Package

8-SO

Gate Charge (Qg) (Max) @ Vgs

23nC @ 5V

Drain to Source Voltage (Vdss)

28V

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 16V

Current - Continuous Drain (Id) @ 25°C

14A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V