IRF7706TR

Product Parameter

Series

HEXFET®

FET Type

P-Channel

Packaging

Tape & Reel (TR)

Vgs (Max)

±20V

Technology

MOSFET (Metal Oxide)

FET Feature

-

Part Status

Obsolete

Mounting Type

Surface Mount

Package / Case

8-TSSOP (0.173", 4.40mm Width)

Vgs(th) (Max) @ Id

2.5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

22mOhm @ 7A, 10V

Power Dissipation (Max)

1.51W (Ta)

Supplier Device Package

8-TSSOP

Gate Charge (Qg) (Max) @ Vgs

72nC @ 10V

Drain to Source Voltage (Vdss)

30V

Input Capacitance (Ciss) (Max) @ Vds

2211pF @ 25V

Current - Continuous Drain (Id) @ 25°C

7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V