IRF7663

Product Parameter

Series

HEXFET®

FET Type

P-Channel

Packaging

Tube

Vgs (Max)

±12V

Technology

MOSFET (Metal Oxide)

FET Feature

-

Part Status

Obsolete

Mounting Type

Surface Mount

Package / Case

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Vgs(th) (Max) @ Id

1.2V @ 250µA

Rds On (Max) @ Id, Vgs

20mOhm @ 7A, 4.5V

Power Dissipation (Max)

1.8W (Ta)

Supplier Device Package

Micro8™

Gate Charge (Qg) (Max) @ Vgs

45nC @ 5V

Drain to Source Voltage (Vdss)

20V

Input Capacitance (Ciss) (Max) @ Vds

2520pF @ 10V

Current - Continuous Drain (Id) @ 25°C

8.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V