IRF3315

Product Parameter

Series

HEXFET®

FET Type

N-Channel

Packaging

Tube

Vgs (Max)

±20V

Technology

MOSFET (Metal Oxide)

FET Feature

-

Part Status

Obsolete

Mounting Type

Through Hole

Package / Case

TO-220-3

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

70mOhm @ 12A, 10V

Power Dissipation (Max)

136W (Tc)

Supplier Device Package

TO-220AB

Gate Charge (Qg) (Max) @ Vgs

95nC @ 10V

Drain to Source Voltage (Vdss)

150V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

Current - Continuous Drain (Id) @ 25°C

27A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V