IRF1010EZPBF
| Manufacturer: | Infineon Technologies |
In Stock 1948 pcs
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|---|---|---|---|
| Datasheet: | IRF1010EZPBF | ||
| Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
| Description: | MOSFET N-CH 60V 75A TO-220AB | $1.39 | |
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Product Parameter
- Series
- HEXFET®
- FET Type
- N-Channel
- Packaging
- Tube
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 4V @ 100µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 8.5mOhm @ 51A, 10V
- Power Dissipation (Max)
- 140W (Tc)
- Supplier Device Package
- TO-220AB
- Gate Charge (Qg) (Max) @ Vgs
- 86nC @ 10V
- Drain to Source Voltage (Vdss)
- 60V
- Input Capacitance (Ciss) (Max) @ Vds
- 2810pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
Lanka Micro