IPG20N10S4L22ATMA1
Manufacturer: | Infineon Technologies |
In Stock 9843 pcs
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Datasheet: | IPG20N10S4L22ATMA1 | ||
Product Category: | Transistors - FETs, MOSFETs - Arrays | Reference Price (In US Dollars) | 1pcs |
Description: | MOSFET 2N-CH 8TDSON | Inquiry |
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Product Parameter
- Series
- Automotive, AEC-Q101, OptiMOS™
- FET Type
- 2 N-Channel (Dual)
- Packaging
- Digi-Reel®
- FET Feature
- Logic Level Gate
- Part Status
- Active
- Power - Max
- 60W
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Vgs(th) (Max) @ Id
- 2.1V @ 25µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 22mOhm @ 17A, 10V
- Supplier Device Package
- PG-TDSON-8-4
- Gate Charge (Qg) (Max) @ Vgs
- 27nC @ 10V
- Drain to Source Voltage (Vdss)
- 100V
- Input Capacitance (Ciss) (Max) @ Vds
- 1755pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 20A