IPD60R3K3C6ATMA1
Manufacturer: | Infineon Technologies |
In Stock 5000 pcs
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Datasheet: | IPD60R3K3C6ATMA1 | ||
Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
Description: | MOSFET N-CH 600V 1.7A TO252-3 | Inquiry |
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Product Parameter
- Series
- CoolMOS™ C6
- FET Type
- N-Channel
- Packaging
- Digi-Reel®
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Not For New Designs
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 3.5V @ 40µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 3.3Ohm @ 500mA, 10V
- Power Dissipation (Max)
- 18.1W (Tc)
- Supplier Device Package
- PG-TO252-3
- Gate Charge (Qg) (Max) @ Vgs
- 4.6nC @ 10V
- Drain to Source Voltage (Vdss)
- 600V
- Input Capacitance (Ciss) (Max) @ Vds
- 93pF @ 100V
- Current - Continuous Drain (Id) @ 25°C
- 1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V