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IPD60R360P7ATMA1
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IPD60R360P7ATMA1

Manufacturer: Infineon Technologies In Stock 2305 pcs

Datasheet: IPD60R360P7ATMA1
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 650V 9A TO252-3 Inquiry
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Product Parameter

Series
CoolMOS™ P7
FET Type
N-Channel
Packaging
Digi-Reel®
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id
4V @ 140µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
360mOhm @ 2.7A, 10V
Power Dissipation (Max)
41W (Tc)
Supplier Device Package
PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs
13nC @ 10V
Drain to Source Voltage (Vdss)
650V
Input Capacitance (Ciss) (Max) @ Vds
555pF @ 400V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V